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this is information on a product in full production. april 2014 docid026126 rev 2 1/17 STB46N30M5 automotive-grade n-channel 300 v, 53 a, 0.037 typ., mdmesh? v power mosfet in a d 2 pak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? amongst the best r ds(on) * area ? high dv/dt capability ? excellent switching performance ? easy to drive ? 100% avalanche tested applications ? switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. d pak 2 1 3 tab $0y '7$% * 6 order code v ds r ds(on) max. i d STB46N30M5 300 v 0.04 53 a table 1. device summary order code marking packages packaging STB46N30M5 46n30m5 d 2 pak tape and reel www.st.com
contents STB46N30M5 2/17 docid026126 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid026126 rev 2 3/17 STB46N30M5 electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 53 a i d drain current (continuous) at t c = 100 c 34 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 212 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) 2. i sd 53 a, di/dt 400 a/s, v ds(peak) < v (br)dss, v dd =240 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 30 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 16 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 550 mj
electrical characteristics STB46N30M5 4/17 docid026126 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 300 v i dss zero gate voltage drain current (v gs = 0) v ds = 300 v 1 a v ds = 300 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 26.5 a 0.037 0.04 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 4240 - pf c oss output capacitance - 205 - pf c rss reverse transfer capacitance -9.5-pf c o(tr) (1) 1. c o(tr) is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent capacitance time related v ds = 0 to 240 v, v gs = 0 -373-pf c o(er) (2) 2. c o(er) is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent capacitance energy related -202-pf r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.4- q g total gate charge v dd = 240 v, i d = 24 a, v gs = 10 v (see figure 16 ) -95-nc q gs gate-source charge - 23 - nc q gd gate-drain charge - 37 - nc
docid026126 rev 2 5/17 STB46N30M5 electrical characteristics 17 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) voltage delay time v dd = 240 v, i d = 32 a, r g = 4.7 , v gs = 10 v (see figure 15 ) -66-ns t r(v) voltage rise time - 15 - ns t f(i) current fall time - 24 - ns t c(off) crossing time - 22.5 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 53 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 212 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 53 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 48 a, di/dt = 100 a/s v dd = 60 v (see figure 20 ) - 223 ns q rr reverse recovery charge - 2.5 c i rrm reverse recovery current - 23 a t rr reverse recovery time i sd = 48 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) - 280 ns q rr reverse recovery charge - 3.9 c i rrm reverse recovery current - 28 a
electrical characteristics STB46N30M5 6/17 docid026126 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.1 tj=150c tc=25c single pulse 10ms 100 am18133v1 i d 0 0 5 v ds (v) 10 (a) 15 80 6v 7v v gs =10v 20 40 60 100 20 8v 9v 120 140 am18134v1 i d 60 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 80 v ds =25v 9 100 120 140 am18135v1 v gs 6 4 2 0 0 40 q g (nc) (v) 8 60 80 10 v dd =240v i d =24a 12 150 100 50 0 200 250 v ds 20 100 v ds (v) am18136v1 r ds(on) 0.034 0.032 0.03 0 20 i d (a) ( ) 10 30 0.036 v gs =10v 40 50 0.038 0.04 am18137v1
docid026126 rev 2 7/17 STB46N30M5 electrical characteristics 17 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature figure 13. source-drain diode forward characteristics c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am18138v1 e oss 4 2 0 0 50 v ds (v) (j) 200 100 150 6 250 300 8 10 am18139v1 9 *6wk 7 - ?& qrup , ' ?$ $0y 5 '6rq 7 - ?& qrup , ' $ 9 *6 9 $0y v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& $0y
electrical characteristics STB46N30M5 8/17 docid026126 rev 2 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) (j) 10 30 200 400 40 i d =32a v dd =240v eon eoff 600 v gs =10v 800 1000 am18140v1
docid026126 rev 2 9/17 STB46N30M5 test circuits 17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am05540v1 id vgs vds 90%vds 10%id 90%vgs on tdelay-off tfall trise tcross -over 10%vds 90%id vgs(i(t)) on -off tfall trise - )) concept waveform for inductive load turn-off
package mechanical data STB46N30M5 10/17 docid026126 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026126 rev 2 11/17 STB46N30M5 package mechanical data 17 figure 21. d2pak (to-263) drawing 0079457_t
package mechanical data STB46N30M5 12/17 docid026126 rev 2 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid026126 rev 2 13/17 STB46N30M5 package mechanical data 17 figure 22. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
packaging mechanical data STB46N30M5 14/17 docid026126 rev 2 5 packaging mechanical data figure 23. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid026126 rev 2 15/17 STB46N30M5 packaging mechanical data 17 figure 24. reel table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB46N30M5 16/17 docid026126 rev 2 6 revision history table 11. document revision history date revision changes 24-mar-2014 1 initial release. 11-apr-2014 2 ? document status promoted from preliminary data to production data ? minor text changes
docid026126 rev 2 17/17 STB46N30M5 17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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